SSM6J215FE(TE85L,F
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- Mfr.Part #
- SSM6J215FE(TE85L,F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- MOSFET P CH 20V 3.4A ES6
- Stock
- 82,433
- In Stock ：
- 82,433
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- -20V
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 8V
- Series :
- U-MOSVI
- Vgs (Max) :
- ±8V
- Package / Case :
- SOT-563, SOT-666
- ECCN Code :
- EAR99
- Published :
- 2012
- Gate Charge (Qg) (Max) @ Vgs :
- 10.4nC @ 4.5V
- FET Type :
- P-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- 150°C TJ
- Continuous Drain Current (ID) :
- 3.4A
- Input Capacitance (Ciss) (Max) @ Vds :
- 630pF @ 10V
- Element Configuration :
- Single
- Number of Pins :
- 6
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Power Dissipation-Max :
- 500mW Ta
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 59m Ω @ 3A, 4.5V
- Power Dissipation :
- 500mW
- Vgs(th) (Max) @ Id :
- 1V @ 1mA
- Drain to Source Voltage (Vdss) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Datasheets
- SSM6J215FE(TE85L,F
P-Channel Tape & Reel (TR) 59m Ω @ 3A, 4.5V ±8V 630pF @ 10V 10.4nC @ 4.5V 20V SOT-563, SOT-666
SSM6J215FE(TE85L,F Overview
The maximum input capacitance of this device is 630pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.4A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.5V 4.5V), this device helps reduce its power consumption.
SSM6J215FE(TE85L,F Features
a continuous drain current (ID) of 3.4A
a drain-to-source breakdown voltage of -20V voltage
a 20V drain to source voltage (Vdss)
SSM6J215FE(TE85L,F Applications
There are a lot of Toshiba Semiconductor and Storage
SSM6J215FE(TE85L,F applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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