SSM6N48FU,RF(D

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2014

Rds On (Max) @ Id, Vgs :

3.2 Ω @ 10mA, 4V

Terminal Form :

Gull wing

Number of Elements :

2

Vgs(th) (Max) @ Id :

1.5V @ 100μA

JESD-30 Code :

R-PDSO-G6

Drain-source On Resistance-Max :

5.4Ohm

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

30V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Max Power Dissipation :

300mW

FET Feature :

Logic Level Gate, 2.5V Drive

Transistor Application :

SWITCHING

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Terminations :

6

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

0.1A

Input Capacitance (Ciss) (Max) @ Vds :

15.1pF @ 3V

Continuous Drain Current (ID) :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

100mA Ta