SSM6N44FU,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1.5V @ 100μA

Current - Continuous Drain (Id) @ 25°C :

100mA Ta

Drain Current-Max (Abs) (ID) :

0.1A

FET Feature :

Standard

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

8.5pF @ 3V

Number of Terminations :

6

Surface Mount :

yes

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Power - Max :

200mW Ta

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-30 Code :

R-PDSO-G6

Rds On (Max) @ Id, Vgs :

4 Ω @ 10mA, 4V

Drain-source On Resistance-Max :

7Ohm

Factory Lead Time :

12 Weeks

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

30V