SSM6L36TU,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

RoHS Compliant

FET Feature :

Logic Level Gate, 1.5V Drive

Gate Charge (Qg) (Max) @ Vgs :

1.23nC, 1.2nC @ 4V

FET Type :

N and P-Channel

Transistor Element Material :

SILICON

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

46pF 43pF @ 10V

Drain Current-Max (Abs) (ID) :

0.5A

Drain to Source Voltage (Vdss) :

20V

Package / Case :

6-SMD, Flat Leads

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

500mA Ta 330mA Ta

Vgs(th) (Max) @ Id :

1V @ 1mA

Drain-source On Resistance-Max :

0.85Ohm

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

500mW Ta

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Transistor Application :

SWITCHING

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

630m Ω @ 200mA, 5V, 1.31 Ω @ 100mA, 4.5V

DS Breakdown Voltage-Min :

20V

Operating Temperature :

150°C

JESD-30 Code :

R-PDSO-F6