SPP24N60CFD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

600 V

Technology :

MOSFET (Metal Oxide)

Gate to Source Voltage (Vgs) :

20 V

Max Power Dissipation :

240 W

Rise Time :

24 ns

Rds On Max :

185 mΩ

Drain to Source Resistance :

185 mΩ

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Type :

Through Hole

Number of Elements :

1

Max Operating Temperature :

150 °C

Series :

CoolMOS™

Supplier Device Package :

PG-TO220-3-1

Vgs (Max) :

±20V

Product Status :

Active

Package / Case :

TO-220-3

RoHS :

Compliant

Rds On (Max) @ Id, Vgs :

185mOhm @ 15.4A, 10V

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

143 nC @ 10 V

Lead Free :

Lead Free

Turn-Off Delay Time :

100 ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

21.7A (Tc)

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

21.7 A

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

650 V

Power Dissipation :

240 W

Power Dissipation (Max) :

240W (Tc)

Dual Supply Voltage :

650 V

Vgs(th) (Max) @ Id :

5V @ 1.2mA

Turn-On Delay Time :

50 ns

Number of Pins :

3

Min Operating Temperature :

-55 °C

Nominal Vgs :

4 V

Package :

Bulk

Termination :

Through Hole

Threshold Voltage :

4 V

Input Capacitance :

3.16 nF

Radiation Hardening :

No

Drive Voltage (Max Rds On, Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

3160 pF @ 25 V