SPP20N60CFDXKSA1
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- Mfr.Part #
- SPP20N60CFDXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 20.7A TO220-3
- Stock
- 49,300
- In Stock ：
- 49,300
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 9 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 20.7A Tc
- Input Capacitance :
- 2.4nF
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Current Rating :
- 20.7A
- Rise Time :
- 15ns
- Drain to Source Voltage (Vdss) :
- 650V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2400pF @ 25V
- Published :
- 2011
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Max Operating Temperature :
- 150°C
- Drain to Source Breakdown Voltage :
- 600V
- Turn On Delay Time :
- 12 ns
- Number of Pins :
- 3
- Element Configuration :
- Single
- Power Dissipation-Max :
- 208W Tc
- Lead Free :
- Lead Free
- Series :
- CoolMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Drain to Source Resistance :
- 190mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 220mOhm @ 13.1A, 10V
- Supplier Device Package :
- PG-TO220-3-1
- Turn-Off Delay Time :
- 59 ns
- Continuous Drain Current (ID) :
- 20.7A
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- Power Dissipation :
- 208W
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 650V
- Vgs (Max) :
- ±20V
- Rds On Max :
- 220 mΩ
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 6.4 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 124nC @ 10V
- Datasheets
- SPP20N60CFDXKSA1
N-Channel Tube 220mOhm @ 13.1A, 10V ±20V 2400pF @ 25V 124nC @ 10V 650V TO-220-3
SPP20N60CFDXKSA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20.7A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 59 ns.This device has a drain-to-source resistance of 190mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 650V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
SPP20N60CFDXKSA1 Features
a continuous drain current (ID) of 20.7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 59 ns
single MOSFETs transistor is 190mOhm
a 650V drain to source voltage (Vdss)
SPP20N60CFDXKSA1 Applications
There are a lot of Infineon Technologies
SPP20N60CFDXKSA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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