SPP20N60CFDHKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

20.7A Tc

Vgs(th) (Max) @ Id :

5V @ 1mA

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Power Dissipation-Max :

208W Tc

Min Operating Temperature :

-55°C

Package / Case :

TO-220-3

Packaging :

Tube

Published :

2011

Supplier Device Package :

PG-TO220-3

Max Operating Temperature :

150°C

Fall Time (Typ) :

6.4 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

220mOhm @ 13.1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

59 ns

Turn On Delay Time :

12 ns

Mount :

Through Hole

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

124nC @ 10V

Rds On Max :

220 mΩ

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

650V

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Series :

CoolMOS™

Power Dissipation :

208W

Continuous Drain Current (ID) :

20.7A

Input Capacitance :

2.4nF