SPP20N60C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Weight :

45.359237g

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Vgs (Max) :

±20V

Length :

10mm

Fall Time (Typ) :

4.5 ns

Mounting Type :

Through Hole

Supplier Device Package :

PG-TO220-3-1

Vgs(th) (Max) @ Id :

3.9V @ 1mA

Number of Pins :

3

Height :

9.25mm

Element Configuration :

Single

Nominal Vgs :

3 V

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

20.7A Tc

Width :

4.4mm

Max Operating Temperature :

150°C

Series :

CoolMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Voltage - Rated DC :

650V

Current Rating :

20.7A

Contact Plating :

Tin

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

600V

Input Capacitance :

2.4nF

Dual Supply Voltage :

650V

Packaging :

Tube

Drain to Source Resistance :

190mOhm

Rds On Max :

190 mΩ

Gate to Source Voltage (Vgs) :

20V

Termination :

Through Hole

Package / Case :

TO-220-3

Rise Time :

5ns

Continuous Drain Current (ID) :

20.7A

Turn-Off Delay Time :

67 ns

Power Dissipation :

208W

REACH SVHC :

No SVHC

Factory Lead Time :

8 Weeks

Rds On (Max) @ Id, Vgs :

190mOhm @ 13.1A, 10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

208W Tc

Lead Free :

Lead Free

Turn On Delay Time :

10 ns

Threshold Voltage :

3V

Published :

2005