SPP20N60S5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

20A

Power Dissipation :

208W

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

120 ns

Pbfree Code :

yes

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

4.5V

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

690 mJ

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

140 ns

Continuous Drain Current (ID) :

20A

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

40A

Height :

4.4mm

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

190m Ω @ 13A, 10V

Series :

CoolMOS™

Termination :

Through Hole

Mount :

Through Hole

Drain to Source Breakdown Voltage :

600V

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

103nC @ 10V

Radiation Hardening :

No

Width :

10.26mm

RoHS Status :

RoHS Compliant

Voltage - Rated DC :

650V

Nominal Vgs :

4.5 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Published :

2005

Max Dual Supply Voltage :

600V

Packaging :

Tube

Length :

8.64mm

Dual Supply Voltage :

600V

Rise Time :

25ns

Contact Plating :

Tin

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Power Dissipation-Max :

208W Tc

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Fall Time (Typ) :

30 ns

Element Configuration :

Single

Number of Elements :

1

Mounting Type :

Through Hole

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

20V