SPP21N10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

84A

RoHS Status :

RoHS Compliant

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 44μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Current Rating :

21A

Operating Temperature :

-55°C~175°C TJ

Rise Time :

56ns

Drain-source On Resistance-Max :

0.08Ohm

Qualification Status :

Not Qualified

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

80m Ω @ 15A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

90W Tc

Package / Case :

TO-220-3

Published :

2002

Input Capacitance (Ciss) (Max) @ Vds :

865pF @ 25V

Packaging :

Tube

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Fall Time (Typ) :

23 ns

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

100V

Transistor Element Material :

SILICON

Series :

SIPMOS®

Vgs (Max) :

±20V

Turn-Off Delay Time :

37 ns

JESD-609 Code :

e3

Voltage - Rated DC :

100V

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

38.4nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

90W

Continuous Drain Current (ID) :

21A