SPP20N65C3XKSA1
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- Mfr.Part #
- SPP20N65C3XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 20.7A TO220-3
- Stock
- 317
- In Stock ：
- 317
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 4.5 ns
- Max Dual Supply Voltage :
- 650V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 20.7A
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 650V
- Drain to Source Breakdown Voltage :
- 650V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Package / Case :
- TO-220-3
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Power Dissipation :
- 208W
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 2400pF @ 25V
- JEDEC-95 Code :
- TO-220AB
- Current - Continuous Drain (Id) @ 25°C :
- 20.7A Tc
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Current Rating :
- 20.7A
- Vgs(th) (Max) @ Id :
- 3.9V @ 1mA
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2005
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- CoolMOS™
- Rise Time :
- 5ns
- Turn-Off Delay Time :
- 67 ns
- Power Dissipation-Max :
- 208W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 13.1A, 10V
- Datasheets
- SPP20N65C3XKSA1
N-Channel Tube 190m Ω @ 13.1A, 10V ±20V 2400pF @ 25V 114nC @ 10V TO-220-3
SPP20N65C3XKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 690 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2400pF @ 25V.This device conducts a continuous drain current (ID) of 20.7A, which is the maximum continuous current transistor can conduct.Using VGS=650V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 650V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 67 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 650V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SPP20N65C3XKSA1 Features
the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 20.7A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 67 ns
SPP20N65C3XKSA1 Applications
There are a lot of Infineon Technologies
SPP20N65C3XKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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