SPP08N80C3XK

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Drain Current-Max (Abs) (ID) :

8A

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

800V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

650m Ω @ 5.1A, 10V

Avalanche Energy Rating (Eas) :

340 mJ

Series :

CoolMOS™

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

24A

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Pin Count :

3

Power Dissipation-Max :

104W Tc

FET Type :

N-Channel

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.65Ohm

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Packaging :

Tube

Drain to Source Voltage (Vdss) :

800V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

3.9V @ 470μA

Terminal Position :

Single

Number of Elements :

1

Transistor Element Material :

SILICON

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED