SPP02N60S5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

1.8A

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

3Ohm

Pbfree Code :

No

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

THROUGH-HOLE

Terminal Finish :

MATTE TIN

Surface Mount :

No

Number of Terminals :

3

Avalanche Energy Rating (Eas) :

50 mJ

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

3.2A

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

600V

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL