SPP02N80C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Power Dissipation-Max :

42W Tc

Transistor Element Material :

SILICON

Number of Terminations :

3

Number of Elements :

1

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

2A

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

90 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.9V @ 120μA

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

6A

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

800V

Factory Lead Time :

6 Weeks

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 100V

Qualification Status :

Not Qualified

Terminal Position :

Single

Series :

CoolMOS™

ECCN Code :

EAR99

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

2.7 Ω @ 1.2A, 10V

JESD-30 Code :

R-PSFM-T3

Published :

2008

DS Breakdown Voltage-Min :

800V