SPP02N60C3XKSA1
- Mfr.Part #
- SPP02N60C3XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220
- Datasheet
- Download
- Description
- LOW POWER_LEGACY
- Stock
- 25,840
- In Stock :
- 25,840
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Max Dual Supply Voltage :
- 600V
- Power Dissipation :
- 25W
- Number of Elements :
- 1
- Fall Time (Typ) :
- 12 ns
- Nominal Vgs :
- 3 V
- Package / Case :
- TO-220
- Current Rating :
- 1.8A
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 650V
- Input Capacitance :
- 200pF
- Max Power Dissipation :
- 25W
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 68 ns
- Rise Time :
- 3ns
- Lead Free :
- Contains Lead
- Rds On Max :
- 3 Ω
- Element Configuration :
- Single
- Number of Pins :
- 3
- Min Operating Temperature :
- -55°C
- Threshold Voltage :
- 3V
- Published :
- 2005
- RoHS Status :
- RoHS Compliant
- Turn On Delay Time :
- 6 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 1.8A
- Halogen Free :
- Halogen Free
- Drain to Source Resistance :
- 3Ohm
- Max Operating Temperature :
- 150°C
- Drain to Source Voltage (Vdss) :
- 600V
- Drain to Source Breakdown Voltage :
- 600V
- Datasheets
- SPP02N60C3XKSA1

600V TO-220
SPP02N60C3XKSA1 Overview
This device conducts a continuous drain current (ID) of 1.8A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 68 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 600V power, it supports a dual voltage supply of up to maximum.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 600V.
SPP02N60C3XKSA1 Features
a continuous drain current (ID) of 1.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 68 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)
SPP02N60C3XKSA1 Applications
There are a lot of Infineon Technologies
SPP02N60C3XKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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