SPP02N60C3XKSA1

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Mfr.Part #
SPP02N60C3XKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-220
Datasheet
Download
Description
LOW POWER_LEGACY
Stock
25,840
In Stock :
25,840

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Max Dual Supply Voltage :
600V
Power Dissipation :
25W
Number of Elements :
1
Fall Time (Typ) :
12 ns
Nominal Vgs :
3 V
Package / Case :
TO-220
Current Rating :
1.8A
Gate to Source Voltage (Vgs) :
20V
Voltage - Rated DC :
650V
Input Capacitance :
200pF
Max Power Dissipation :
25W
REACH SVHC :
No SVHC
Turn-Off Delay Time :
68 ns
Rise Time :
3ns
Lead Free :
Contains Lead
Rds On Max :
3 Ω
Element Configuration :
Single
Number of Pins :
3
Min Operating Temperature :
-55°C
Threshold Voltage :
3V
Published :
2005
RoHS Status :
RoHS Compliant
Turn On Delay Time :
6 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
1.8A
Halogen Free :
Halogen Free
Drain to Source Resistance :
3Ohm
Max Operating Temperature :
150°C
Drain to Source Voltage (Vdss) :
600V
Drain to Source Breakdown Voltage :
600V
Datasheets
SPP02N60C3XKSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPP02N60C3XKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220, Number of Pins:3, SPP02N60C3XKSA1 pinout, SPP02N60C3XKSA1 datasheet PDF, SPP02N60C3XKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPP02N60C3XKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPP02N60C3XKSA1


600V TO-220

SPP02N60C3XKSA1 Overview


This device conducts a continuous drain current (ID) of 1.8A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 68 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 600V power, it supports a dual voltage supply of up to maximum.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 600V.

SPP02N60C3XKSA1 Features


a continuous drain current (ID) of 1.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 68 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)


SPP02N60C3XKSA1 Applications


There are a lot of Infineon Technologies
SPP02N60C3XKSA1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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