SPP02N80C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

2A

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Factory Lead Time :

6 Weeks

Surface Mount :

No

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

800V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

90 mJ

Vgs (Max) :

±20V

Pbfree Code :

yes

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 100V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Number of Terminations :

3

Reach Compliance Code :

Compliant

Series :

CoolMOS™

Pin Count :

3

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

2.7 Ω @ 1.2A, 10V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Power Dissipation-Max :

42W Tc

Terminal Position :

Single

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

800V

Vgs(th) (Max) @ Id :

3.9V @ 120μA

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

6A

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE