SPP03N60S5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Technology :

MOSFET (Metal Oxide)

Gate Charge (Qg) (Max) @ Vgs :

16 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

3.2A (Tc)

Width :

4.4 mm

Power Dissipation :

38

Continuous Drain Current (ID) :

3.2 A

Length :

10 mm

Package / Case :

TO-220-3

Rise Time :

25 ns

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Rds On Max :

1.4 Ω

Height :

9.25 mm

RoHS :

Compliant

FET Feature :

-

Current Rating :

3.2 A

Max Power Dissipation :

38 W

Package :

Bulk

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain to Source Resistance :

1.4 Ω

Lead Free :

Contains Lead

Series :

CoolMOS™

Min Operating Temperature :

-55 °C

Turn-Off Delay Time :

40 ns

Turn-On Delay Time :

35 ns

Gate to Source Voltage (Vgs) :

20 V

Power Dissipation (Max) :

38W (Tc)

Channel Type :

N

Drain to Source Voltage (Vdss) :

600 V

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 2A, 10V

Number of Pins :

3

Max Operating Temperature :

150 °C

Input Capacitance (Ciss) (Max) @ Vds :

420 pF @ 25 V

FET Type :

N-Channel

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

5.5V @ 135µA

Voltage Rating (DC) :

650 V

Continuous Drain Current Id :

3.2

Product Status :

Active

Element Configuration :

Single

Drain to Source Breakdown Voltage :

600 V

Input Capacitance :

420 pF

Supplier Device Package :

PG-TO220-3-1