SPP02N60S5HKSA1
- Mfr.Part #
- SPP02N60S5HKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 1.8A TO220-3
- Stock
- 3,031
- In Stock :
- 3,031
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 1.8A
- Terminal Position :
- Single
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Published :
- 2005
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED, HIGH VOLTAGE
- Series :
- CoolMOS™
- Pin Count :
- 3
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- JEDEC-95 Code :
- TO-220AB
- Max Dual Supply Voltage :
- 600V
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 3 Ω @ 1.1A, 10V
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 240pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 9.5nC @ 10V
- Halogen Free :
- Not Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 3Ohm
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 25W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 1.8A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 5.5V @ 80μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Datasheets
- SPP02N60S5HKSA1

N-Channel Tube 3 Ω @ 1.1A, 10V ±20V 240pF @ 25V 9.5nC @ 10V TO-220-3
SPP02N60S5HKSA1 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 50 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 240pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.8A.This device supports dual supply voltages maximally powered by 600V.Using drive voltage (10V) reduces this device's overall power consumption.
SPP02N60S5HKSA1 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 1.8A
SPP02N60S5HKSA1 Applications
There are a lot of Infineon Technologies
SPP02N60S5HKSA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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