SPP08N80C3
- Mfr.Part #
- SPP08N80C3
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- SPP08N80 - 800V COOLMOS N-CHANNE
- Stock
- 48,288
- In Stock :
- 48,288
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Fall Time (Typ) :
- 7 ns
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Width :
- 4.57mm
- Turn On Delay Time :
- 25 ns
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED, HIGH VOLTAGE
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 104W
- Package / Case :
- TO-220-3
- Current Rating :
- 8A
- Drain to Source Breakdown Voltage :
- 800V
- Drain Current-Max (Abs) (ID) :
- 8A
- Drain to Source Resistance :
- 650mOhm
- Published :
- 2000
- Min Operating Temperature :
- -55°C
- Length :
- 10.36mm
- Lead Free :
- Contains Lead
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 65 ns
- Voltage - Rated DC :
- 800V
- Rise Time :
- 15ns
- Height :
- 15.95mm
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current (ID) :
- 8A
- Rds On Max :
- 650 mΩ
- Capacitance - Input :
- 1.1nF
- Terminal Finish :
- Matte Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 24A
- Number of Elements :
- 1
- Pin Count :
- 3
- Power Dissipation-Max :
- 104W
- Max Operating Temperature :
- 150°C
- Halogen Free :
- Halogen Free
- Gate to Source Voltage (Vgs) :
- 20V
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 6 Weeks
- Datasheets
- SPP08N80C3

TO-220-3
SPP08N80C3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 65 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 24A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 650mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.
SPP08N80C3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 650mOhm
SPP08N80C3 Applications
There are a lot of Infineon
SPP08N80C3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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