SPP08N80C3

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Mfr.Part #
SPP08N80C3
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
SPP08N80 - 800V COOLMOS N-CHANNE
Stock
48,288
In Stock :
48,288

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Fall Time (Typ) :
7 ns
REACH SVHC :
No SVHC
Surface Mount :
No
Qualification Status :
Not Qualified
Element Configuration :
Single
Width :
4.57mm
Turn On Delay Time :
25 ns
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
RoHS Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
3
Pbfree Code :
yes
Additional Feature :
AVALANCHE RATED, HIGH VOLTAGE
JEDEC-95 Code :
TO-220AB
Power Dissipation :
104W
Package / Case :
TO-220-3
Current Rating :
8A
Drain to Source Breakdown Voltage :
800V
Drain Current-Max (Abs) (ID) :
8A
Drain to Source Resistance :
650mOhm
Published :
2000
Min Operating Temperature :
-55°C
Length :
10.36mm
Lead Free :
Contains Lead
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn-Off Delay Time :
65 ns
Voltage - Rated DC :
800V
Rise Time :
15ns
Height :
15.95mm
Terminal Form :
THROUGH-HOLE
Continuous Drain Current (ID) :
8A
Rds On Max :
650 mΩ
Capacitance - Input :
1.1nF
Terminal Finish :
Matte Tin (Sn)
Pulsed Drain Current-Max (IDM) :
24A
Number of Elements :
1
Pin Count :
3
Power Dissipation-Max :
104W
Max Operating Temperature :
150°C
Halogen Free :
Halogen Free
Gate to Source Voltage (Vgs) :
20V
Polarity/Channel Type :
N-Channel
Factory Lead Time :
6 Weeks
Datasheets
SPP08N80C3
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPP08N80C3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Package / Case:TO-220-3, SPP08N80C3 pinout, SPP08N80C3 datasheet PDF, SPP08N80C3 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPP08N80C3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPP08N80C3


TO-220-3

SPP08N80C3 Overview


Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 65 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 24A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 650mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.

SPP08N80C3 Features


a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 650mOhm


SPP08N80C3 Applications


There are a lot of Infineon
SPP08N80C3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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