SPP07N65C3XKSA1
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- Mfr.Part #
- SPP07N65C3XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220
- Datasheet
- Download
- Description
- LOW POWER_LEGACY
- Stock
- 29,174
- In Stock ：
- 29,174
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220
- Halogen Free :
- Halogen Free
- Published :
- 2008
- Element Configuration :
- Single
- Mount :
- Through Hole
- Current Rating :
- 7.3A
- Number of Elements :
- 1
- Drain to Source Resistance :
- 600mOhm
- Turn-Off Delay Time :
- 60 ns
- Max Dual Supply Voltage :
- 650V
- Rds On Max :
- 600 mΩ
- Width :
- 4.57mm
- Gate to Source Voltage (Vgs) :
- 20V
- Max Operating Temperature :
- 150°C
- Drain to Source Breakdown Voltage :
- 650V
- Continuous Drain Current (ID) :
- 7.3A
- Number of Pins :
- 3
- Power Dissipation :
- 83W
- Height :
- 15.95mm
- Rise Time :
- 3.5ns
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 6 ns
- Min Operating Temperature :
- -55°C
- Input Capacitance :
- 790pF
- Max Power Dissipation :
- 83W
- Length :
- 10.36mm
- Fall Time (Typ) :
- 7 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 650V
- Voltage - Rated DC :
- 650V
- Datasheets
- SPP07N65C3XKSA1
650V TO-220
SPP07N65C3XKSA1 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 600mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 650V.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.
SPP07N65C3XKSA1 Features
a continuous drain current (ID) of 7.3A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 60 ns
single MOSFETs transistor is 600mOhm
a 650V drain to source voltage (Vdss)
SPP07N65C3XKSA1 Applications
There are a lot of Infineon Technologies
SPP07N65C3XKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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