SPP07N60S5HKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Published :

2005

Surface Mount :

No

Drain-source On Resistance-Max :

0.6Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

83W

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Terminal Position :

Single

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

600V

Avalanche Energy Rating (Eas) :

230 mJ

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

14.6A

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

7.3A

Operating Temperature (Max) :

150°C

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

THROUGH-HOLE

Number of Terminations :

3

Transistor Element Material :

SILICON

Pin Count :

3