SPP07N60S5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

650V

Turn-Off Delay Time :

170 ns

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

120 ns

Height :

9.45mm

Drain to Source Breakdown Voltage :

600V

Power Dissipation-Max :

83W Tc

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

7.3A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

14.6A

Series :

CoolMOS™

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

7.3A

Max Dual Supply Voltage :

600V

Length :

10.36mm

Pbfree Code :

yes

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2004

Number of Pins :

3

Power Dissipation :

83W

Drain-source On Resistance-Max :

0.6Ohm

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

RoHS Status :

RoHS Compliant

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

5.5V @ 350µA

Halogen Free :

Not Halogen Free

Factory Lead Time :

8 Weeks

Qualification Status :

Not Qualified

Rise Time :

40ns

Number of Terminations :

3

Fall Time (Typ) :

20 ns

Threshold Voltage :

4.5V

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.6A, 10V

REACH SVHC :

No SVHC

Width :

4.57mm

Input Capacitance (Ciss) (Max) @ Vds :

970pF @ 25V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Mount :

Through Hole