SPP07N60C3HKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Power Dissipation-Max :

83W Tc

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™

Drain-source On Resistance-Max :

0.6Ohm

Transistor Element Material :

SILICON

Published :

2005

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Pbfree Code :

yes

Turn-Off Delay Time :

60 ns

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

650V

Fall Time (Typ) :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

FET Type :

N-Channel

Number of Pins :

3

Power Dissipation :

83W

DS Breakdown Voltage-Min :

600V

Turn On Delay Time :

6 ns

Case Connection :

DRAIN

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.6A, 10V

Continuous Drain Current (ID) :

7.3A

Rise Time :

3.5ns

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

3.9V @ 350µA

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 25V

Terminal Position :

Single