SPP06N80C3XK

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

6A

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

83W Tc

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

18A

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

JEDEC-95 Code :

TO-220AB

Series :

CoolMOS™

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

900m Ω @ 3.8A, 10V

Surface Mount :

No

Packaging :

Tube

Terminal Position :

Single

Drain-source On Resistance-Max :

0.9Ohm

Drain to Source Voltage (Vdss) :

800V

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

800V

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING