SPP06N60C3HKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

18.6A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

6.2A

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

Qualification Status :

Not Qualified

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3.9V @ 260µA

Published :

2008

Drain to Source Voltage (Vdss) :

650V

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.75Ohm

Mounting Type :

Through Hole

Surface Mount :

No

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

Power Dissipation-Max :

74W Tc

Series :

CoolMOS™

Number of Terminations :

3

FET Type :

N-Channel

Reach Compliance Code :

Compliant

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

750m Ω @ 3.9A, 10V

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

200 mJ

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3