SPP04N80C3XK

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Pbfree Code :

yes

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

63W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

1.3 Ω @ 2.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

800V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

3.9V @ 240μA

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

12A

Drain Current-Max (Abs) (ID) :

4A

Pin Count :

3

Series :

CoolMOS™

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Factory Lead Time :

18 Weeks

Number of Elements :

1

Avalanche Energy Rating (Eas) :

170 mJ

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

800V

Published :

2008

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED