SPP04N60S5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

950mOhm @ 2.8A, 10V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Channel Type :

N

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

CoolMOS™

Power Dissipation (Max) :

50W (Tc)

Package :

Bulk

Supplier Device Package :

PG-TO220-3-1

Input Capacitance (Ciss) (Max) @ Vds :

580 pF @ 25 V

Vgs(th) (Max) @ Id :

5.5V @ 200µA

Current - Continuous Drain (Id) @ 25°C :

4.5A (Tc)

Gate Charge (Qg) (Max) @ Vgs :

22.9 nC @ 10 V

Product Status :

Active

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Continuous Drain Current Id :

4.5

FET Feature :

-

Technology :

MOSFET (Metal Oxide)

Package / Case :

TO-220-3