SPP04N60C3HKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

13.5A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3.9V @ 200µA

Surface Mount :

No

Packaging :

Tube

Published :

2005

Drain-source On Resistance-Max :

0.95Ohm

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

4.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

130 mJ

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Package / Case :

TO-220-3

Pin Count :

3

Power Dissipation-Max :

50W Tc

Additional Feature :

AVALANCHE RATED

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Vgs (Max) :

±20V

Series :

CoolMOS™

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.8A, 10V

FET Type :

N-Channel

DS Breakdown Voltage-Min :

600V

Pbfree Code :

yes

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE