SPP04N50C3XKSA1
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- Mfr.Part #
- SPP04N50C3XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220
- Datasheet
- Download
- Description
- LOW POWER_LEGACY
- Stock
- 33,211
- In Stock ：
- 33,211
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Length :
- 10.36mm
- Width :
- 4.57mm
- Factory Lead Time :
- 18 Weeks
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 500V
- RoHS Status :
- ROHS3 Compliant
- Max Dual Supply Voltage :
- 500V
- Package / Case :
- TO-220
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 4.5A
- Drain to Source Resistance :
- 850mOhm
- Voltage - Rated DC :
- 560V
- Current Rating :
- 4.5A
- Max Operating Temperature :
- 150°C
- Height :
- 20.7mm
- Max Junction Temperature (Tj) :
- 150°C
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2005
- Mount :
- Through Hole
- Turn On Delay Time :
- 10 ns
- Lead Free :
- Contains Lead
- Number of Channels :
- 1
- Input Capacitance :
- 470pF
- Min Operating Temperature :
- -55°C
- Rise Time :
- 5ns
- Power Dissipation :
- 50W
- Drain to Source Breakdown Voltage :
- 500V
- Turn-Off Delay Time :
- 70 ns
- Number of Pins :
- 3
- Max Power Dissipation :
- 50W
- Datasheets
- SPP04N50C3XKSA1
500V TO-220
SPP04N50C3XKSA1 Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.5A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 70 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 850mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.
SPP04N50C3XKSA1 Features
a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)
SPP04N50C3XKSA1 Applications
There are a lot of Infineon Technologies
SPP04N50C3XKSA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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