SPD08P06PGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

-3V

Turn-Off Delay Time :

48 ns

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

70 mJ

Drive Voltage (Max Rds On,Min Rds On) :

6.2V

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 25V

Fall Time (Typ) :

14 ns

Number of Pins :

3

JESD-609 Code :

e3

Halogen Free :

Not Halogen Free

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-60V

RoHS Status :

ROHS3 Compliant

Rise Time :

46ns

JESD-30 Code :

R-PSSO-G2

Pin Count :

4

Number of Elements :

1

Power Dissipation-Max :

42W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

-60V

Max Junction Temperature (Tj) :

175°C

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

-8.83A

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

8.83A Ta

Reach Compliance Code :

not_compliant

Factory Lead Time :

18 Weeks

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Series :

SIPMOS®

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

42W

Number of Channels :

1

Terminal Position :

Single

Vgs (Max) :

±20V

Turn On Delay Time :

16 ns

FET Type :

P-Channel

Published :

1999

Current Rating :

-8.8A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Breakdown Voltage :

-60V

Lead Free :

Contains Lead

Drain to Source Voltage (Vdss) :

60V

Height :

2.5mm

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

300m Ω @ 10A, 6.2V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED