SPD03N50C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Rise Time :

5ns

Number of Pins :

3

Drain to Source Voltage (Vdss) :

500V

Power Dissipation-Max :

38W Tc

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 2A, 10V

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Voltage - Rated DC :

560V

Packaging :

Tape and Reel (TR)

Series :

CoolMOS™

Input Capacitance :

350pF

Fall Time (Typ) :

15 ns

Turn On Delay Time :

10 ns

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

Turn-Off Delay Time :

70 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Number of Elements :

1

Max Dual Supply Voltage :

500V

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

PG-TO252-3-1

Rds On Max :

1.4 Ω

Vgs(th) (Max) @ Id :

3.9V @ 135µA

RoHS Status :

ROHS3 Compliant

Power Dissipation :

38W

Drain to Source Resistance :

1.25Ohm

Published :

2005

Factory Lead Time :

8 Weeks

Current Rating :

3.2A

Continuous Drain Current (ID) :

3.2A

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V