SPD02N50C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

500V

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Continuous Drain Current (ID) :

1.8A

Published :

2002

Max Dual Supply Voltage :

500V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

5.4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Pbfree Code :

yes

Turn On Delay Time :

10 ns

JEDEC-95 Code :

TO-252AA

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

560V

Turn-Off Delay Time :

70 ns

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

3Ohm

Avalanche Energy Rating (Eas) :

50 mJ

Number of Terminations :

2

Power Dissipation :

25W

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

REACH SVHC :

No SVHC

FET Type :

N-Channel

Threshold Voltage :

3V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

15 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Current Rating :

1.8A

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Halogen Free :

Not Halogen Free

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.9V @ 80µA

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

25W Tc

Pin Count :

3

Series :

CoolMOS™

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.1A, 10V

Terminal Form :

Gull wing

Rise Time :

5ns