SPD03N50C3BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™

Surface Mount :

yes

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

500V

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Case Connection :

DRAIN

Number of Elements :

1

Pbfree Code :

yes

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

100 mJ

Drain to Source Voltage (Vdss) :

560V

Vgs(th) (Max) @ Id :

3.9V @ 135µA

Power Dissipation-Max :

38W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

JEDEC-95 Code :

TO-252AA

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain Current-Max (Abs) (ID) :

3.2A

Number of Terminations :

2

Terminal Position :

Single

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

9.6A