SPD02N50C3BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

500V

JEDEC-95 Code :

TO-252AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

50 mJ

Drain-source On Resistance-Max :

3Ohm

Pbfree Code :

No

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

1.8A

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Operating Temperature (Max) :

150°C

Case Connection :

DRAIN

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Published :

2005

Pulsed Drain Current-Max (IDM) :

5.4A

Factory Lead Time :

52 Weeks

Pin Count :

3