SPD02N60C3BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

No

Qualification Status :

Not Qualified

Published :

2005

RoHS Status :

RoHS Compliant

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.1A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

1.8A

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3.9V @ 80µA

Avalanche Energy Rating (Eas) :

50 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

3Ohm

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Series :

CoolMOS™

Drain to Source Voltage (Vdss) :

650V

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-252AA

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Case Connection :

DRAIN

Power Dissipation-Max :

25W Tc

Mounting Type :

Surface Mount

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 10V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

5.4A

Terminal Form :

Gull wing

JESD-609 Code :

e3

Terminal Position :

Single

DS Breakdown Voltage-Min :

600V