SPD02N80C3BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

2.7 Ω @ 1.2A, 10V

Terminal Form :

Gull wing

Turn-Off Delay Time :

65 ns

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Series :

CoolMOS™

Pulsed Drain Current-Max (IDM) :

6A

Rise Time :

15ns

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

42W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Number of Elements :

1

Max Dual Supply Voltage :

800V

Avalanche Energy Rating (Eas) :

90 mJ

Vgs (Max) :

±20V

FET Type :

N-Channel

Case Connection :

DRAIN

JEDEC-95 Code :

TO-252AA

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 100V

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

18 ns

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Power Dissipation-Max :

42W Tc

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Pin Count :

4

Vgs(th) (Max) @ Id :

3.9V @ 120μA

Continuous Drain Current (ID) :

2A

Turn On Delay Time :

25 ns

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

2A