SPD08N50C3BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

7.6A

Power Dissipation-Max :

83W Tc

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Drain-source On Resistance-Max :

0.6Ohm

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.6A, 10V

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Avalanche Energy Rating (Eas) :

230 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

22.8A

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Series :

CoolMOS™

Operating Mode :

ENHANCEMENT MODE

Published :

2005

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

500V

Pin Count :

3

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3.9V @ 350µA

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

560V