SPD07N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Surface Mount :

yes

Series :

CoolMOS™

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.6A, 10V

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Packaging :

Tube

Number of Terminations :

2

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

230 mJ

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

3.9V @ 350µA

Reach Compliance Code :

Compliant

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252AA

Drain-source On Resistance-Max :

0.6Ohm

Terminal Position :

Single

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain Current-Max (Abs) (ID) :

7.3A

Pulsed Drain Current-Max (IDM) :

21.9A

Power Dissipation-Max :

83W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2003

Number of Elements :

1

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 25V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V