SPD07N20GBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

SIPMOS®

Pulsed Drain Current-Max (IDM) :

28A

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

31.5nC @ 10V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Drain-source On Resistance-Max :

0.4Ohm

Drain Current-Max (Abs) (ID) :

7A

ECCN Code :

EAR99

Halogen Free :

Not Halogen Free

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

Power Dissipation :

40W

Continuous Drain Current (ID) :

7A

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Turn-Off Delay Time :

55 ns

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant

Rise Time :

40ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

200V

Pin Count :

4

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Number of Terminations :

2

Turn On Delay Time :

10 ns

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

40W Tc

Mount :

Surface Mount

Pbfree Code :

yes

Published :

2005

Additional Feature :

AVALANCHE RATED

Radiation Hardening :

No

Fall Time (Typ) :

30 ns