SPD07N20

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

200V

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

7A

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

55 ns

Number of Terminations :

2

Power Dissipation-Max :

40W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

31.5nC @ 10V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

28A

Pin Count :

3

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Series :

SIPMOS®

Rise Time :

40ns

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

200V

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.4Ohm

Avalanche Energy Rating (Eas) :

120 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

ECCN Code :

EAR99

Continuous Drain Current (ID) :

7A

Published :

2005

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

40W

Vgs(th) (Max) @ Id :

4V @ 1mA

Fall Time (Typ) :

30 ns

Current Rating :

7A

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)