SPD06N80C3BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Power Dissipation :

83W

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.9Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 100V

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Published :

2008

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Max Dual Supply Voltage :

800V

Drain Current-Max (Abs) (ID) :

6A

Turn On Delay Time :

25 ns

ECCN Code :

EAR99

JEDEC-95 Code :

TO-252AA

Case Connection :

DRAIN

Terminal Position :

Single

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Rise Time :

15ns

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

230 mJ

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Power Dissipation-Max :

83W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Fall Time (Typ) :

8 ns

Radiation Hardening :

No

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

6A

Series :

CoolMOS™

Rds On (Max) @ Id, Vgs :

900m Ω @ 3.8A, 10V

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Turn-Off Delay Time :

72 ns

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE