SPD04P10PGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

38W Tc

Pbfree Code :

No

Case Connection :

DRAIN

Factory Lead Time :

18 Weeks

Vgs(th) (Max) @ Id :

4V @ 380µA

Qualification Status :

Not Qualified

Power Dissipation :

38W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Rise Time :

8.6ns

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

5.7 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Mount :

Surface Mount

Published :

2007

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

4.5 ns

Turn-Off Delay Time :

14 ns

Continuous Drain Current (ID) :

4A

Max Dual Supply Voltage :

-100V

Input Capacitance (Ciss) (Max) @ Vds :

319pF @ 25V

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Series :

SIPMOS®

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.8A, 10V

Halogen Free :

Not Halogen Free

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Avalanche Energy Rating (Eas) :

57 mJ

Drain Current-Max (Abs) (ID) :

4A

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Number of Terminations :

2

Pin Count :

4