SPD04N80C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

18 Weeks

Turn-Off Delay Time :

72 ns

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 100V

Vgs(th) (Max) @ Id :

3.9V @ 240μA

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Input Capacitance :

570pF

Series :

CoolMOS™

Rds On Max :

1.3 Ω

Supplier Device Package :

PG-TO252-3

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Fall Time (Typ) :

12 ns

Power Dissipation :

63W

Drain to Source Voltage (Vdss) :

800V

Drain to Source Resistance :

1.1Ohm

Current Rating :

4A

Voltage - Rated DC :

800V

Number of Elements :

1

Lead Free :

Lead Free

Rise Time :

15ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1.3Ohm @ 2.5A, 10V

Packaging :

Tape and Reel (TR)

Published :

2005

Continuous Drain Current (ID) :

4A

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

25 ns

Mount :

Surface Mount

Power Dissipation-Max :

63W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

800V