SPD04N60S5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

JESD-609 Code :

e3

Power Dissipation :

50W

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

600V

Series :

CoolMOS™

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

50W Tc

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

60 ns

Pbfree Code :

yes

Pin Count :

3

FET Type :

N-Channel

Turn On Delay Time :

55 ns

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.8A, 10V

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

30ns

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 25V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Surface Mount :

yes

Continuous Drain Current (ID) :

4.5A

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Gate Charge (Qg) (Max) @ Vgs :

22.9nC @ 10V

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5.5V @ 200µA

Pulsed Drain Current-Max (IDM) :

9A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.95Ohm

Fall Time (Typ) :

15 ns

Current Rating :

4.5A

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE