SPD04N60C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

50W

Rise Time :

2.5ns

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Supplier Device Package :

PG-TO252-3

Vgs(th) (Max) @ Id :

3.9V @ 200µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

490pF

Number of Pins :

3

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

950mOhm @ 2.8A, 10V

Max Operating Temperature :

150°C

Power Dissipation-Max :

50W Tc

Fall Time (Typ) :

9.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

40 Weeks

Continuous Drain Current (ID) :

4.5A

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Drain to Source Resistance :

850mOhm

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Rds On Max :

950 mΩ

Published :

2005

Series :

CoolMOS™

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

58.5 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Max Dual Supply Voltage :

600V

Turn On Delay Time :

6 ns

Current Rating :

4.5A

FET Type :

N-Channel

Voltage - Rated DC :

650V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

600V