SPD04N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.95Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

50W Tc

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

4.5A

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Number of Terminations :

2

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

3.9V @ 200µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Series :

CoolMOS™

Avalanche Energy Rating (Eas) :

130 mJ

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.8A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

13.5A

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Drain to Source Voltage (Vdss) :

600V

Number of Elements :

1

Terminal Form :

Gull wing

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252AA

Pbfree Code :

yes

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

600V