SPD04N50C3BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

4.5A

DS Breakdown Voltage-Min :

500V

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.8A, 10V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Vgs (Max) :

±20V

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2005

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.9V @ 200µA

Avalanche Energy Rating (Eas) :

130 mJ

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Series :

CoolMOS™

Power Dissipation-Max :

50W Tc

Drain to Source Voltage (Vdss) :

560V

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

13.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Pin Count :

4

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.95Ohm

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

8 Weeks

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V