SP8M4FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Cut Tape (CT)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

18m Ω @ 9A, 10V, 28m Ω @ 7A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V, 25nC @ 5V

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

9A Ta 7A Ta

FET Type :

N and P-Channel

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Factory Lead Time :

20 Weeks

Pulsed Drain Current-Max (IDM) :

36A

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.025Ohm

Mounting Type :

Surface Mount

Power - Max :

2W

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 10V 2600pF @ 10V

Series :

Automotive, AEC-Q101

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

JESD-30 Code :

R-PDSO-G8

Number of Elements :

2

FET Feature :

Standard

DS Breakdown Voltage-Min :

30V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

9A

Published :

2016

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant