SP8K1TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 10V

Power Dissipation :

2W

Continuous Drain Current (ID) :

5A

Terminal Form :

Gull wing

Pin Count :

8

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Pins :

8

ECCN Code :

EAR99

JESD-609 Code :

e2

Number of Terminations :

8

Fall Time (Typ) :

5 ns

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 5V

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Published :

2004

Rds On (Max) @ Id, Vgs :

51m Ω @ 5A, 10V

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Max Power Dissipation :

2W

Number of Elements :

2

Transistor Element Material :

SILICON

Turn On Delay Time :

6 ns

Voltage - Rated DC :

30V

Time@Peak Reflow Temperature-Max (s) :

10

Rise Time :

8ns

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

20A

Current Rating :

5A

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

5A

Drain to Source Breakdown Voltage :

30V

Base Part Number :

*K1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

TIN COPPER

Radiation Hardening :

No

Turn-Off Delay Time :

22 ns