SP8K2TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

24A

Turn-Off Delay Time :

36 ns

Max Power Dissipation :

2W

Base Part Number :

*K2

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Published :

2004

Transistor Element Material :

SILICON

Current Rating :

6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

13 ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

30m Ω @ 6A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

6A

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

10.1nC @ 5V

Voltage - Rated DC :

30V

JESD-609 Code :

e2

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

Rise Time :

21ns

Continuous Drain Current (ID) :

6A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

TIN COPPER

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.047Ohm

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Type :

2 N-Channel (Dual)

Number of Pins :

8

Turn On Delay Time :

9 ns

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing